1. Product Name: SC-FC0808AB
2. Features:
(1) High luminous intensity.
(2) Long operation life.
(3) RGB display / Backlighting applications.
3. Physical Characteristics:
(1) Size:
Chip size: 195±20 μm × 195±20 μm
Chip thickness: 95±10 μm
P bonding pad: 170±10 μm × 35±10 μm
N bonding pad: 170±10 μm × 35±10 μm
PN Gap: 100±10 μm
(2) Metallization:
P electrode: Au alloy
N electrode: Au alloy
(3) Structure:
Refer to the drawing.
4. Electro-Optical Characteristics (Ta=25oC):
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Forward Voltage | VF1 | IF = 5 mA | 2.7 | 2.9 | 3.1 | V |
VF4 | IF = 10μA | 2.0 | - | - | V | |
Reverse Current | IR | VR = 8 V | - | - | 1 | μA |
Dominant Wavelength | λd | IF = 5 mA | 445 | - | 465 | nm |
Spectra Half Width | λH | IF = 5 mA | - | 20 | - | nm |
Light Output Power | PO | IF = 5 mA | 20 | - | - | mW |
Note:
(1) ESD protection during chip handling is strongly recommended.
(2) All measurements are done on chip form with SINO CRYSTAL’s standard testing equipment.
(3) Dominant wavelength measurement allows a tolerance of ±1nm.
(4) Radiant flux measurement allows a tolerance of ±5%.
(5) Customer’s special requirements are also welcome.
5. Absolute Maximum Ratings:
Parameter | Symbol | Condition | Rating | Unit |
Forward DC Current | IF | Ta = 25oC | ≤ 30 | mA |
Reverse Voltage | VR | Ta = 25oC | ≤5 | V |
Junction Temperature | Tj | - | ≤120 | oC |
Storage Temperature | Tstg | Chip | -40～85 | oC |
Chip-on-tape / Storage | 5～35 | oC | ||
Chip-on-tape / Transportation | -20～65 | oC | ||
Temperature during Packaging | - | - | 260 (<5sec) | oC |
